Datasheet > 2PD601AW

2PD601AW

更新时间： 2024-11-15 02:57:27

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
3页	133K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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2PD601AW 数据手册

BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

2PD601AW

FEATURES

Lead-free

Collector Current.(I_C= 100mA）

Excellent H_FELinearity.

Power dissipation.(P_C=200mW)

APPLICATIONS

General purpose application.

SOT-323

ORDERING INFORMATION

Type No.

Marking

6D/6E/6F

Package Code

SOT-323

2PD601AW

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

100

200

℃

P_C

Junction and Storage Temperature

T_j,T_stg

-55~150

Document number: BL/SSSTF028

Rev.A

www.galaxycn.com

12 3

中文翻译

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