Datasheet > 2PD601AW

2PD601AW

更新时间： 2024-11-16 14:54:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	656K
描述
SOT-323

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中文翻译

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数据手册

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2PD601AW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

2PD601AW TRANSISTOR (NPN)

FEATURES

SOT–323

 High Collector Current

 Low Colletor-Emitter Saturation Voltage

APPLICATIONS

 General Purpose Switching and Amplification

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

2. EMITTER

3. COLLECTOR

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

200

625

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ

Max

Unit

V_(BR)CBOI_C=100µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=100µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=60V, I_E=0

V_EB=5V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=2V, I_C=100mA

V_CE=10V, I_C=2mA

I_C=100mA, I_B=10mA

DC current gain

h_FE(2)

160

460

0.5

V_CE(sat)

Collector-emitter saturation voltage

2PD601AQW

100

120

140

f_T

V_CE=10V,I_C=2mA,f=100MHz

V_CB=10V, I_E=0, f=1MHz

MHz

Transition frequency

2PD601ARW

2PD601ASW

C_ob

3.5

Collector output capacitance

*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE(2)

RANK

160–260

RANGE

210–340

290–460

MARKING

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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