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2PD601AS PDF预览

2PD601AS

更新时间: 2024-10-30 12:32:31
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 91K
描述
Low current (max. 100 mA) Low voltage (max. 50 V).Collector-base voltage VCBO 60 V

2PD601AS 数据手册

 浏览型号2PD601AS的Datasheet PDF文件第2页 
Product specification  
2PD601A  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Low current (max. 100 mA)  
Low voltage (max. 50 V).  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
Collector-emitter voltage  
V
Emitter-base voltage  
6
V
Collector current (DC)  
100  
mA  
mA  
mA  
mW  
Peak collector current  
ICM  
200  
Peak base current  
IBM  
100  
Ptot  
250  
Total power dissipation Tamb 25 ; *  
Storage temperature  
Tstg  
-65 to +150  
150  
Junction temperature  
Tj  
Operating ambient temperature  
Thermal resistance from junction to ambient *  
* Transistor mounted on an FR4 printed-circuit board.  
Tamb  
Rth j-a  
-65 to +150  
500  
K/W  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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