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2N7002E-13-F PDF预览

2N7002E-13-F

更新时间： 2024-02-17 20:24:33
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
5页 110K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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2N7002E-13-F 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5Is Samacsys：N
JESD-609代码：e3湿度敏感等级：1
峰值回流温度（摄氏度）：260端子面层：Matte Tin (Sn)
处于峰值回流温度下的最长时间：30Base Number Matches：1

2N7002E-13-F 数据手册

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2N7002E  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Units  
V
V
60  
Drain-Gate Voltage RGS 1.0M  
VDGR  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
V
VGSS  
ID  
Steady  
State  
250  
200  
TA = +25°C  
mA  
mA  
Continuous Drain Current (Note 5) VGS = 10V  
Continuous Drain Current (Note 6) VGS = 10V  
T
A = +70°C  
TA = +25°C  
A = +70°C  
Steady  
State  
300  
240  
ID  
T
Maximum Body Diode Forward Current (Note 6)  
Pulsed Drain Current (10µs pulse, duty cycle = 1%)  
500  
800  
mA  
mA  
IS  
IDM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
370  
540  
348  
241  
91  
Units  
(Note 5)  
Total Power Dissipation  
(Note 6)  
mW  
PD  
(Note 5)  
Thermal Resistance, Junction to Ambient  
(Note 6)  
RθJA  
°C/W  
°C  
(Note 6)  
Thermal Resistance, Junction to Case  
RθJC  
Operating and Storage Temperature Range  
-55 to 150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
60  
70  
V
BVDSS  
IDSS  
VGS = 0V, ID = 10µA  
VDS = 60V, VGS = 0V  
1.0  
500  
Zero Gate Voltage Drain Current  
@ TC = +25°C  
@ TC = +125°C  
µA  
nA  
Gate-Body Leakage  
±10  
IGSS  
VGS = ±15V, VDS = 0V  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
1.0  
2.5  
V
VGS(th)  
VDS = VGS, ID = 250µA  
VGS = 10V, ID = 250mA  
VGS = 4.5V, ID = 200mA  
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
1.6  
2.0  
3
4
Static Drain-Source On-Resistance  
@ TJ = +25°C  
ꢀ
RDS (ON)  
On-State Drain Current  
0.8  
80  
1.0  
A
ID(ON)  
gFS  
Forward Transconductance  
DYNAMIC CHARACTERISTICS (Note 8)  
Input Capacitance  
mS  
22  
11  
50  
25  
5.0  
pF  
pF  
pF  
ꢀ
Ciss  
Coss  
Crss  
Rg  
V
DS = 25V, VGS = 0V, f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
2.0  
120  
223  
82  
Gate resistance  
  
  
  
  
VDS = 0V, VGS = 0V, f = 1.0MHz  
pC  
pC  
pC  
Total Gate Charge (VGS = 4.5V)  
Gate-Source Charge  
Gate-Drain Charge  
Qg  
V
DS  
= 10V, I = 250mA  
D
Qgs  
Qgd  
178  
SWITCHING CHARACTERISTICS (Note 8)  
Turn-On Delay Time  
7.0  
11  
20  
20  
ns  
ns  
tD(ON)  
V
DD = 30V, ID = 0.2A,  
RL = 150ꢀ, VGEN = 10V, RGEN = 25ꢀ  
Turn-Off Delay Time  
tD(OFF)  
Notes:  
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.  
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.  
7. Short duration pulse test used to minimize self-heating effect.  
8. Guaranteed by design. Not subject to product testing.  
2 of 5  
www.diodes.com  
August 2013  
© Diodes Incorporated  
2N7002E  
Document number: DS30376 Rev. 14 - 2  
12345

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