2N7002BK

更新时间： 2024-01-03 21:32:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号场效应晶体管光电二极管放大器
页数	文件大小	规格书
16页	176K
描述
60 V, 350 mA N-channel Trench MOSFET

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技术参数
数据手册

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2N7002BK 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002BK 数据手册

2N7002BK

NXP Semiconductors

60 V, 350 mA N-channel Trench MOSFET

017aaa039

017aaa040

−3

−4

−5

−6

0.7

(A)

0.6

= 4.0 V

3.5 V

(A)

3.25 V

3.0 V

0.5

0.4

0.3

0.2

0.1

0.0

(1)

(2)

(3)

2.75 V

2.5 V

0.0

1.0

2.0

3.0

4.0

0.0

1.0

2.0

3.0

(V)

T_amb= 25 °C

T_amb= 25 °C; V_DS= 5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical

values

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

017aaa041

017aaa042

6.0

DSon

(Ω)

(1)

4.0

2.0

0.0

4.0

2.0

0.0

(2)

(3)

(1)

(2)

(4)

(5)

0.0

0.2

0.4

0.6

0.8

1.0

0.0

2.0

4.0

6.0

8.0

10.0

(V)

(A)

T_amb= 25 °C

_D= 500 mA

(1) V_GS= 3.25 V

(2) V_GS= 3.5 V

(3) V_GS= 4 V

(4) V_GS= 5 V

(5) V_GS= 10 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values

Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

2N7002BK

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 17 June 2010

7 of 16

1...4 5 678 9 10...16

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