生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.58 |
最大集电极电流 (IC): | 10 A | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 1000 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 27 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 20 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6648E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor | |
2N6648LEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N6649 | NJSEMI |
获取价格 |
PNP DARLINGTON TRANSISTOR | |
2N6649 | MOSPEC |
获取价格 |
POWER TRANSISTORS(10A,100W) | |
2N6649 | CENTRAL |
获取价格 |
POWER TRANSISTORS TO-3 CASE | |
2N6649 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR | |
2N6649E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor | |
2N6649LEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N665 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 | |
2N6650 | MOSPEC |
获取价格 |
POWER TRANSISTORS(10A,100W) |