Datasheet > 2N6654

2N6654

更新时间： 2024-09-17 06:19:07

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	42K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2N6654 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2N6654

DESCRIPTION

·With TO-3 package

·High voltage capability

·Fast switching speeds

·Low saturation voltage

APPLICATIONS

·Switcing regulators

·Inverters

·Solenoid and relay drivers

·Deflection circuits

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

MAXIMUN RATINGS(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

500

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

350

Open collector

I_CM

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

P_T

T_c=25℃

150

℃

T_j

200

T_stg

-65~200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.0

℃/W

12 3

中文翻译

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与2N6654相关器件

型号	品牌	获取价格	描述	数据表
2N6655	MICROSEMI	获取价格	Power Bipolar Transistor, 20A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6655	VISHAY	获取价格	Power Bipolar Transistor, 20A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Meta
2N6655	NJSEMI	获取价格	HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS
2N6655	SEME-LAB	获取价格	Bipolar NPN Device
2N6658	NJSEMI	获取价格	N-CHANNEL ENHANCEMENT MOSFET
2N6658	MUSIC	获取价格	2N6658
2N6659	NJSEMI	获取价格	TMOS SWITCHING TRANSISTOR
2N6659	SEME-LAB	获取价格	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6659	MOTOROLA	获取价格	TMOS SWITCHING FET TRANSISTORS
2N6659B-1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal