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2N6426G PDF预览

2N6426G

更新时间: 2024-11-04 03:56:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
7页 297K
描述
Darlington Transistors NPN Silicon

2N6426G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:5.1
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:40 V
配置:DARLINGTON最小直流电流增益 (hFE):20000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

2N6426G 数据手册

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Discr ete P OWER & Sign a l  
Tech n ologies  
2N6426  
TO-92  
C
B
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at currents to 1.0 A. Sourced from  
Process 05. See MPSA14 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
12  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.2  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N6426  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

2N6426G 替代型号

型号 品牌 替代类型 描述 数据表
BC557ATA ONSEMI

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100 mA, 45 V, PNP Bipolar Juction Transistor
BC557BTA ONSEMI

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50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor, 2000-FNFLD
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