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BC557BTA

更新时间: 2024-01-30 23:32:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管开关PC
页数 文件大小 规格书
8页 111K
描述
50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor, 2000-FNFLD

BC557BTA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大集电极电流 (IC):0.1 A
配置:SingleJESD-609代码:e0
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC557BTA 数据手册

 浏览型号BC557BTA的Datasheet PDF文件第2页浏览型号BC557BTA的Datasheet PDF文件第3页浏览型号BC557BTA的Datasheet PDF文件第4页浏览型号BC557BTA的Datasheet PDF文件第5页浏览型号BC557BTA的Datasheet PDF文件第6页浏览型号BC557BTA的Datasheet PDF文件第7页 
BC556B, BC557, A, B, C,  
BC558B, C  
Amplifier Transistors  
PNP Silicon  
http://onsemi.com  
COLLECTOR  
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
Vdc  
2
CEO  
1
BC556  
BC557  
BC558  
–65  
–45  
–30  
BASE  
2
3
3
CASE 29  
TO–92  
Collector-Base Voltage  
Emitter-Base Voltage  
V
Vdc  
CBO  
EBO  
EMITTER  
BC556  
BC557  
BC558  
–80  
–50  
–30  
STYLE 17  
ORDERING INFORMATION  
V
–5.0  
Vdc  
Device  
Package  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
Shipping  
Collector Current – Continuous  
Collector Current – Peak  
I
–100  
–200  
mAdc  
C
I
CM  
BC556B  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
Base Current – Peak  
I
–200  
mAdc  
BM  
BC556BRL1  
BC556BZL1  
BC557  
Total Device Dissipation  
P
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation  
P
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
BC557ZL1  
2000/Ammo Pack  
C
Derate above 25°C  
BC557A  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
5000 Units/Box  
2000/Ammo Pack  
5000 Units/Box  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
BC557AZL1  
BC557B  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
BC557BRL1  
BC557BZL1  
BC557C  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θJA  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θJC  
BC557CZL1  
BC558B  
2000/Ammo Pack  
5000 Units/Box  
BC558BRL  
BC558BRL1  
BC558BZL1  
BC558C  
2000/Tape & Reel  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
BC558CRL1  
BC558ZL1  
BC558CZL1  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
June, 2000 – Rev. 1  
BC556/D  

BC557BTA 替代型号

型号 品牌 替代类型 描述 数据表
BC557BTF ONSEMI

类似代替

50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor, 2000-REEL
2N6426G ONSEMI

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2N6426 ONSEMI

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