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BC557C

更新时间: 2024-11-04 08:49:35
品牌 Logo 应用领域
美微科 - MCC 晶体放大器晶体管
页数 文件大小 规格书
5页 284K
描述
PNP Silicon Amplifier Transistor 625mW

BC557C 数据手册

 浏览型号BC557C的Datasheet PDF文件第2页浏览型号BC557C的Datasheet PDF文件第3页浏览型号BC557C的Datasheet PDF文件第4页浏览型号BC557C的Datasheet PDF文件第5页 
BC556,B  
BC557,A,B,C  
BC558,B  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
PNP Silicon  
Amplifier Transistor  
625mW  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
150oC Junction Temperature  
Through Hole Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Marking:Type Number  
TO-92  
A
E
Mechanical Data  
Case: TO-92, Molded Plastic  
Polarity: indicated as below.  
B
Maximum Ratings @ 25oC Unless Otherwise Specified  
Charateristic  
Symbol Value Unit  
Collector-Emitter Voltage BC556  
-65  
C
VCEO  
BC557  
BC558  
BC556  
BC557  
BC558  
-45  
-30  
-80  
-50  
-30  
V
Collector-Base Voltage  
VCBO  
V
V
D
VEBO  
IC  
Emitter-Base Voltage  
Collector Current(DC)  
-5.0  
-100  
mA  
mW  
625  
5.0  
1.5  
12  
o
1-Collector  
2-Base  
Pd  
Pd  
Power Dissipation@TA=25 C  
Power Dissipation@TC=25oC  
mW/oC  
W
1
2
3
3-Emitter  
G
mW/oC  
oC/W  
DIMENSIONS  
Thermal Resistance, Junction to  
Ambient Air  
Thermal Resistance, Junction to  
Case  
R
INCHES  
MM  
200  
JA  
DIM  
A
B
C
D
E
G
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MAX  
.190  
.190  
.590  
.020  
.160  
.104  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
NOTE  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
oC/W  
R
83.3  
JC  
Operating & Storage Temperature T, TSTG -55~150 oC  
j
www.mccsemi.com  
1 of 5  
Revision: A  
2011/01/01  

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