2N6426

更新时间： 2024-02-03 22:29:50

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
8页	112K
描述
Darlington Transistors

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中文翻译

获取价格

数据手册
替代型号

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2N6426 数据手册

ON Semiconductort

2N6426*

2N6427

Darlington Transistors

NPN Silicon

*ON Semiconductor Preferred Device

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

Collector Current — Continuous

500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

qJA

COLLECTOR 3

83.3

qJC

BASE

EMITTER 1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

(I = 10 mAdc, V = 0)

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = 100 mAdc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 mAdc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = 25 Vdc, I = 0)

1.0

mAdc

nAdc

CES

Collector Cutoff Current

(V = 30 Vdc, I = 0)

CBO

Emitter Cutoff Current

(V = 10 Vdc, I = 0)

EBO

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

February, 2001 – Rev.1

2N6426/D

12 3 4 5 6 7 8

中文翻译

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2N6426 替代型号

型号	品牌	替代类型	描述	数据表
BC557ATA	ONSEMI	类似代替	100 mA, 45 V, PNP Bipolar Juction Transistor
BC557BTA	ONSEMI	类似代替	50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor, 2000-FNFLD
2N6426G	ONSEMI	类似代替	Darlington Transistors NPN Silicon

与2N6426相关器件

型号	品牌	获取价格	描述	数据表
2N6426/D	ETC	获取价格	Darlington Transistors NPN
2N6426/D10Z-5	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N6426/D10Z-J25Z	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N6426/D11Z	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6426/D11Z-18	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N6426/D11Z-5	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N6426/D11Z-J14Z	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N6426/D11Z-J61Z	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N6426/D26Z	TI	获取价格	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6426/D26Z-5	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3