BC557C

更新时间： 2024-11-03 22:48:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	44K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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BC557C 数据手册

BC546/547/548/549/550

Switching and Applications

•

High Voltage: BC546, V

Low Noise: BC549, BC550

Complement to BC556 ... BC560

=65V

CEO

TO-92

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage : BC546

CBO

: BC547/550

: BC548/549

Collector-Emitter Voltage : BC546

CEO

EBO

: BC547/550

: BC548/549

Emitter-Base Voltage

Collector Current (DC)

: BC546/547

: BC548/549/550

100

500

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-65 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

Min.

Typ.

Max.

Units

=30V, I =0

CBO

=5V, I =2mA

110

800

(sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA

200

250

600

I =100mA, I =5mA

(sat)

(on)

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

I =10mA, I =0.5mA

700

900

I =100mA, I =5mA

=5V, I =2mA

580

660

700

720

=5V, I =10mA

Current Gain Bandwidth Product

Output Capacitance

=5V, I =10mA, f=100MHz

300

3.5

MHz

=10V, I =0, f=1MHz

Input Capacitance

=0.5V, I =0, f=1MHz

Noise Figure

: BC546/547/548

: BC549/550

: BC549

=5V, I =200µA

f=1KHz, R =2KΩ

1.2

1.4

=5V, I =200µA

: BC550

R =2KΩ, f=30~15000MHz

Classification

110 ~ 220

200 ~ 450

420 ~ 800

Rev. A2, August 2002

12 3 4

中文翻译

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BC557C,112	NXP	获取价格	TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN,
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BC557C{BOX}	DIODES	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92