是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
风险等级: | 5.33 | 集电极-发射极最大电压: | 40 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 20000 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6426RLRAG | ONSEMI |
获取价格 |
Darlington Transistors NPN Silicon |
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2N6426RLRF | MOTOROLA |
获取价格 |
500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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2N6426TRC | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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2N6426TRD | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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2N6426TRE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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2N6426TRH | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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2N6426ZL1 | MOTOROLA |
获取价格 |
500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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2N6427 | TI |
获取价格 |
1200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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2N6427 | NXP |
获取价格 |
NPN Darlington transistor |
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2N6427 | SAMSUNG |
获取价格 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
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