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2N6426RLRAG PDF预览

2N6426RLRAG

更新时间: 2024-11-25 03:56:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
7页 297K
描述
Darlington Transistors NPN Silicon

2N6426RLRAG 数据手册

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Discr ete P OWER & Sign a l  
Tech n ologies  
2N6426  
TO-92  
C
B
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at currents to 1.0 A. Sourced from  
Process 05. See MPSA14 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
12  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.2  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N6426  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

2N6426RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
2N6426RLRA ONSEMI

完全替代

NPN 达林顿双极晶体管
2N6426RLRA MOTOROLA

功能相似

500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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