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2N6426RL PDF预览

2N6426RL

更新时间: 2024-11-04 21:01:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
6页 75K
描述
500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

2N6426RL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.39其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:40 V
配置:DARLINGTON最小直流电流增益 (hFE):20000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N6426RL 数据手册

 浏览型号2N6426RL的Datasheet PDF文件第2页浏览型号2N6426RL的Datasheet PDF文件第3页浏览型号2N6426RL的Datasheet PDF文件第4页浏览型号2N6426RL的Datasheet PDF文件第5页浏览型号2N6426RL的Datasheet PDF文件第6页 
2N6426, 2N6427  
2N6426 is a Preferred Device  
Darlington Transistors  
NPN Silicon  
Features  
These are Pb−Free Devices*  
http://onsemi.com  
COLLECTOR 3  
MAXIMUM RATINGS  
BASE  
2
Rating  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
40  
Vdc  
EMITTER 1  
12  
Vdc  
Collector Current − Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
TO−92  
CASE 29  
STYLE 1  
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
1
1
2
2
3
3
THERMAL CHARACTERISTICS  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
83.3  
q
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2N  
642x  
AYWW G  
G
x
= 6 or 7  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 3  
2N6426/D  

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