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2N6315CPBFREE PDF预览

2N6315CPBFREE

更新时间: 2024-11-08 07:03:31
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 425K
描述
Transistor,

2N6315CPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):7 A
配置:Single最小直流电流增益 (hFE):20
最高工作温度:200 °C极性/信道类型:NPN
最大功率耗散 (Abs):90 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N6315CPBFREE 数据手册

 浏览型号2N6315CPBFREE的Datasheet PDF文件第2页 
2N6315 2N6316 NPN  
2N6317 2N6318 PNP  
www.centralsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6315 SERIES  
types are complementary Silicon Power Transistors,  
mounted in a hermetically sealed metal case,  
designed for general purpose amplifier and switching  
applications.  
MARKING: FULL PART NUMBER  
TO-66 CASE  
2N6315  
2N6317  
60  
2N6316  
2N6318  
80  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
80  
V
V
5.0  
7.0  
15  
Continuous Collector Current  
Peak Collector Current  
I
A
C
I
A
CM  
Continuous Base Current  
Power Dissipation  
I
2.0  
90  
A
B
P
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
1.95  
°C  
°C/W  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
I
V
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
0.25  
mA  
CBO  
CEV  
CEV  
CEO  
EBO  
CB  
CE  
CE  
CE  
EB  
CBO  
, V =1.5V  
0.25  
2.0  
mA  
mA  
mA  
mA  
V
CEO BE  
, V =1.5V, T =150°C  
CEO BE  
C
=1/2 Rated V  
0.50  
1.0  
CEO  
=5.0V  
BV  
I =100mA, (2N6315, 2N6317)  
60  
80  
CEO  
CEO  
C
BV  
I =100mA, (2N6316, 2N6318)  
V
C
V
V
V
V
I =4.0A, I =0.4A  
1.0  
2.0  
2.5  
1.5  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
I =7.0A, I =1.75A  
V
C
B
I =7.0A, I =1.75A  
V
C
B
V
=4.0V, I =2.5A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
V
V
V
V
V
=4.0V, I =0.5A  
35  
20  
C
=4.0V, I =2.5A  
100  
FE  
C
=4.0V, I =7.0A  
4.0  
20  
FE  
C
=4.0V, I =500mA, f=1.0kHz  
fe  
C
f
=10V, I =250mA, f=1.0MHz  
4.0  
MHz  
T
C
R2 (6-April 2011)  

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