是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 7 A |
配置: | Single | 最小直流电流增益 (hFE): | 20 |
最高工作温度: | 200 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 90 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6315LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
2N6316 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N6316 | SEME-LAB |
获取价格 |
COMPLEMENTARY SILICON | |
2N6316 | MOSPEC |
获取价格 |
POWER TRANSISTORS(7.0A,90W) | |
2N6316 | BOCA |
获取价格 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS | |
2N6316 | CENTRAL |
获取价格 |
Power Transistors | |
2N6316 | NJSEMI |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
2N6316 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N6316A | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-66 | |
2N6316LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 |