Datasheet > 2N6317

2N6317

更新时间： 2024-09-17 05:55:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	116K
描述
Silicon PNP Power Transistors

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2N6317 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6317 2N6318

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

·Complement to type 2N6315/6316

APPLICATIONS

·Designed for general-purpose power

amplifier and switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

2N6317

2N6318

2N6317

2N6318

V_CBO

Collector-base voltage

Open emitter

-80

-60

V_CEO

Collector-emitter voltage

Open base

-80

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

ꢀ

-7

Collector current-peak

Base current

-15

-2

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.94

ꢀ/W

12 3

中文翻译

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