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2N6316 PDF预览

2N6316

更新时间: 2024-11-07 06:18:43
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页数 文件大小 规格书
3页 131K
描述
Silicon NPN Power Transistors

2N6316 数据手册

 浏览型号2N6316的Datasheet PDF文件第2页浏览型号2N6316的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6315 2N6316  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
·Complement to type 2N6317/6318  
APPLICATIONS  
·Designed for general-purpose power  
amplifier and switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N6315  
2N6316  
2N6315  
2N6316  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
7
15  
Collector current-peak  
Base current  
A
2
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
90  
W
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.94  
/W  

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