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2N6284 PDF预览

2N6284

更新时间: 2024-11-03 22:45:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 58K
描述
NPN DARLINGTON POWER SILICON TRANSISTOR

2N6284 数据手册

 浏览型号2N6284的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN DARLINGTON POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 504  
Devices  
Qualified Level  
JAN  
2N6283  
2N6284  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol 2N6583 2N6284 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
Collector Current  
Total Power Dissipation(1)  
80  
100  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
80  
100  
7.0  
0.5  
20  
IC  
@ TC = +250C  
@ TC = +1000C  
175  
87.5  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
TO-3*  
(TO-204AA)  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly @ 1.17 W/0C above TC > +250C  
0.857  
R
qJC  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
80  
100  
2N6283  
2N6284  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 40 Vdc  
VCE = 50 Vdc  
1.0  
1.0  
mAdc  
2N6283  
2N6284  
ICEO  
Collector-Emitter Cutoff Current  
VCE = 80 Vdc, VBE = 1.5 Vdc  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
5.0  
5.0  
mAdc  
mAdc  
2N6283  
2N6284  
ICEX  
2.5  
IEBO  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N6284 替代型号

型号 品牌 替代类型 描述 数据表
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