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2N6286 PDF预览

2N6286

更新时间: 2024-11-04 06:16:31
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3页 114K
描述
Silicon PNP Power Transistors

2N6286 数据手册

 浏览型号2N6286的Datasheet PDF文件第2页浏览型号2N6286的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N6285 2N6286 2N6287  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N6282/6283/6284  
·High DC current gain  
·DARLINGTON  
APPLICATIONS  
·For use in general-purpose amplifier and  
low-frequency switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
2N6285  
2N6286  
2N6287  
2N6285  
2N6286  
2N6287  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
-20  
Collector current-peak  
Base current  
-40  
-0.5  
160  
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
200  
Tstg  
-65~200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.09  
/W  

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