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2N6286 PDF预览

2N6286

更新时间: 2024-11-04 12:51:07
品牌 Logo 应用领域
COMSET 晶体晶体管开关局域网
页数 文件大小 规格书
3页 80K
描述
PNP DARLINGTON POWER SILICON TRANSISTOR

2N6286 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:unknown
风险等级:5.62外壳连接:COLLECTOR
最大集电极电流 (IC):20 A基于收集器的最大容量:400 pF
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):100JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:PNP
最大功率耗散 (Abs):160 W表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:2 VBase Number Matches:1

2N6286 数据手册

 浏览型号2N6286的Datasheet PDF文件第2页浏览型号2N6286的Datasheet PDF文件第3页 
2N6285 – 2N6286 – 2N6287  
PNP DARLINGTON POWER SILICON TRANSISTOR  
The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package.  
They are designed for use in general–purpose amplifier and low–frequency switching  
applications.  
The complementary NPN are 2N6282, 2N6283, 2N6284  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
2N6285  
2N6286  
-60  
-80  
Collector-Emitter Voltage (IB=0)  
V
2N6287  
2N6285  
-100  
-60  
VCBO  
VEBO  
IC  
Collector-Base Voltage (IE=0)  
Emitter-Base Voltage (IC=0)  
Collector Current  
2N6286  
2N6287  
2N6285  
2N6286  
2N6287  
2N6285  
2N6286  
-80  
-100  
V
V
-5  
-20  
2N6287  
2N6285  
A
ICM  
Collector Peak Current  
Base Current  
2N6286  
2N6287  
2N6285  
2N6286  
2N6287  
2N6285  
-40  
IB  
-0.5  
A
W/°C  
°C  
PT  
Power Dissipation  
@ TC = 25° 2N6286  
2N6287  
160  
2N6285  
2N6286  
2N6287  
2N6285  
TJ  
Junction Temperature  
Storage Temperature  
200  
TS  
2N6286  
-65 to +200  
°C  
2N6287  
04/12/2012  
COMSET SEMICONDUCTORS  
1/3  

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