2N5551TF-Y

更新时间： 2024-09-15 13:04:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
6页	75K
描述
Small Signal Bipolar Transistor

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中文翻译

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技术参数
数据手册

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2N5551TF-Y 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.57	Is Samacsys：	N
Base Number Matches：	1

2N5551TF-Y 数据手册

2N5550, 2N5551

Preferred Device

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

http://onsemi.com

• Device Marking: Device Type, e.g., 2N5550, Date Code

COLLECTOR

BASE

MAXIMUM RATINGS

Rating

Symbol 2N5550 2N5551

Unit

Vdc

EMITTER

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current − Continuous

Total Device Dissipation

CEO

CBO

140

160

180

Vdc

EBO

6.0

Vdc

MARKING

DIAGRAM

600

mAdc

@ T = 25°C

Derate above 25°C

625

5.0

mW/°C

55xx

YWW

TO−92

CASE 29

STYLE 1

Total Device Dissipation

@ T = 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

55xx

Specific Device Code

= Year

= Work Week

Maximumratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

ORDERING INFORMATION

THERMAL CHARACTERISTICS

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

200

°C/W

Preferred devices are recommended choices for future use

and best overall value.

Thermal Resistance,

Junction−to−Case

83.3

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

downloadthe ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 3

2N5550/D

12 3 4 5 6

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与2N5551TF-Y相关器件

型号	品牌	获取价格	描述	数据表
2N5551TRB	CENTRAL	获取价格	Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N5551TRC	CENTRAL	获取价格	Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N5551TRD	CENTRAL	获取价格	Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N5551TRE	CENTRAL	获取价格	暂无描述
2N5551TRELEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N5551TRF	CENTRAL	获取价格	Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N5551TRG	CENTRAL	获取价格	Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N5551TRH	CENTRAL	获取价格	暂无描述
2N5551U	SWST	获取价格	小信号晶体管
2N5551UB	STMICROELECTRONICS	获取价格	160V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, LCC-3