生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
Is Samacsys: | N | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5552-1 | VISHAY |
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Transistor, | |
2N5552E3 | MICROSEMI |
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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, | |
2N5555 | MOTOROLA |
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CASE 29.04, STYLE 5 TO-92 (TO-226AA) | |
2N5555 | ONSEMI |
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JFET Switching N-Channel - Depletion | |
2N5555 | CENTRAL |
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10mA,360mW Through-Hole JFET N Channel | |
2N5555/D | ETC |
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JFET Switching | |
2N5555/D10Z | TI |
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N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 | |
2N5555/D11Z | TI |
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N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 | |
2N5555/D26Z | TI |
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N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 | |
2N5555/D27Z | TI |
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N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |