Datasheet > 2N5555

2N5555

更新时间： 2024-09-16 03:56:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管
页数	文件大小	规格书
8页	175K
描述
JFET Switching N-Channel - Depletion

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中文翻译

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数据手册

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2N5555 数据手册

ON Semiconductort

1 DRAIN

JFET Switching

N–Channel — Depletion

2N5555

GATE

2 SOURCE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Forward Gate Current

Vdc

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Junction Temperature Range

Storage Temperature Range

–65 to +150

°C

CASE 29–11, STYLE 5

TO–92 (TO–226AA)

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage (I = 10 µAdc, V

= 0)

—

Vdc

(BR)GSS

Gate Reverse Current (V

= 15 Vdc, V

= 0)

1.0

nAdc

GSS

Drain Cutoff Current (V

= 12 Vdc, V

= –10 V)

= –10 V, T = 100°C)

D(off)

—

2.0

nAdc

µAdc

ON CHARACTERISTICS

(1)

Zero–Gate–Voltage Drain Current

—

1.0

1.5

150

mAdc

Vdc

DSS

= 15 Vdc, V

= 0)

Gate–Source Forward Voltage

(I = 1.0 mAdc, V = 0)

GS(f)

G(f)

Drain–Source On–Voltage

(I = 7.0 mAdc, V = 0)

Vdc

DS(on)

Static Drain–Source On Resistance

(I = 0.1 mAdc, V = 0)

Ohms

DS(on)

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.

SMALL–SIGNAL CHARACTERISTICS

Small–Signal Drain–Source “ON” Resistance

—

150

5.0

1.2

Ohms

ds(on)

= 0, I = 0, f = 1.0 kHz)

Input Capacitance

(V = 15 Vdc, V

iss

rss

= 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(V = 0, V = 10 Vdc, f = 1.0 MHz)

DS GS

SWITCHING CHARACTERISTICS

Turn–On Delay Time

Rise Time

= 10 Vdc, I

= 7.0 mAdc,

= –10 Vdc) (See Figure 1)

—

5.0

D(on)

d(on)

= 0, V

GS(on)

GS(off)

Turn–Off Delay Time

Fall Time

= 10 Vdc, I

= 7.0 mAdc,

= –10 Vdc) (See Figure 1)

D(on)

d(off)

= 0, V

GS(on)

GS(off)

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 3

2N5555/D

12 3 4 5 6 7 8

中文翻译

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