Datasheet > 2N5551UB09

2N5551UB09

更新时间： 2024-11-06 09:35:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	403K
描述
SMALL SIGNAL TRANSISTOR

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2N5551UB09 数据手册

2N5551HR

Hi-Rel NPN bipolar transistor 160 V, 0.5 A

Datasheet

production data

Features

BV_CEO

160 V

0.5 A

> 80

I_C(max)

_FEat 5 V - 10 mA

TO-18

LCC-3

• Hermetic packages

• ESCC and JANS qualified

• Up to 100 krad(Si) low dose rate

Description

Figure 1. Internal schematic diagram

The 2N5551HR is a silicon planar NPN transistor

specifically designed and housed in hermetic

packages for aerospace and Hi-Rel applications.

It is available in the JAN qualification system

(MIL-PRF19500 compliance) and in the ESCC

qualification system (ESCC 5000 compliance). In

case of discrepancies between this datasheet and

the relevant agency specification, the latter takes

precedence.

Table 1. Device summary⁽¹⁾

Qualification

system

Device

Agency specification

Package

Other features

EPPL

JANSR2N5551UBx

JANS2N5551UBx

2N5551RUBx

2N5551UB0x

JANSR

JANS

MIL-PRF-19500/761

5201/019

100 krad JANS

Target

Yes

ESCC

100 krad ESCC

5201/019

SOC5551RHRx

SOC5551HRB

2N5551RHRx

2N5551HR

5201/019

LCC-3

TO-18

100 krad ESCC

5201/019

100 krad ESCC

5201/019

1. Former SW version have been upgraded to ESCC 100 krad Low dose rate version. Contact ST sales office for more

information.

December 2013

DocID16935 Rev 5

1/18

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...18

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