是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 7.99 | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 160 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.625 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5551YCHBU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2N5551YIUBU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2N5551ZL1 | ONSEMI |
获取价格 |
600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN | |
2N5551ZL1G | ONSEMI |
获取价格 |
小信号 NPN 双极晶体管 | |
2N5552 | NJSEMI |
获取价格 |
POWER TRANSISTOR | |
2N5552-1 | VISHAY |
获取价格 |
Transistor, | |
2N5552E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, | |
2N5555 | MOTOROLA |
获取价格 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA) | |
2N5555 | ONSEMI |
获取价格 |
JFET Switching N-Channel - Depletion | |
2N5555 | CENTRAL |
获取价格 |
10mA,360mW Through-Hole JFET N Channel |