Datasheet > 2N5551YIUBU

2N5551YIUBU

更新时间： 2024-11-07 04:47:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
14页	511K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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2N5551YIUBU 数据手册

MMBT5551

2N5551

TO-92

SOT-23

Mark: 3S

NPN General Purpose Amplifier

This device is designed for general purpose high voltage amplifiers

and gas discharge display drivers.

Absolute Maximum Ratings*

TA= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

160

180

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

600

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5551

*MMBT5551

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

350

2.8

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor International

2N5551/MMBT5551, Rev A

12 3 4 5 6 7...14

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