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2N5551ZL1 PDF预览

2N5551ZL1

更新时间: 2024-11-06 14:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
6页 102K
描述
600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

2N5551ZL1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.01Is Samacsys:N
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5551ZL1 数据手册

 浏览型号2N5551ZL1的Datasheet PDF文件第2页浏览型号2N5551ZL1的Datasheet PDF文件第3页浏览型号2N5551ZL1的Datasheet PDF文件第4页浏览型号2N5551ZL1的Datasheet PDF文件第5页浏览型号2N5551ZL1的Datasheet PDF文件第6页 
2N5550, 2N5551  
Preferred Device  
Amplifier Transistors  
NPN Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
2
BASE  
Collector − Emitter Voltage  
V
CEO  
Vdc  
2N5550  
2N5551  
140  
160  
1
EMITTER  
Collector − Base Voltage  
V
CBO  
Vdc  
2N5550  
2N5551  
160  
180  
Emitter − Base Voltage  
V
EBO  
6.0  
Vdc  
Collector Current − Continuous  
I
C
600  
mAdc  
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
TO−92  
CASE 29  
STYLE 1  
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
1
2
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
3
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
2N  
555x  
AYWW G  
G
R
q
83.3  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
x = 0 or 1  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 4  
2N5550/D  

2N5551ZL1 替代型号

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2N5551TFR FAIRCHILD

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