Datasheet > 2N5551U

2N5551U

更新时间： 2024-09-16 14:54:07

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	241K
描述
小信号晶体管

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2N5551U 数据手册

2N5551U

NPN Silicon Epitaxial Planar Transistor

Applications

• For general purpose, high voltage amplifier applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

180

160

600

℃

Power Dissipation

P_tot

500

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

250

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 27/04/2023 Rev: 05

12 3 4 5

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