是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | 风险等级: | 5.82 |
JESD-609代码: | e0 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
端子面层: | TIN LEAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3012 | SEME-LAB |
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Bipolar PNP Device in a Hermetically sealed TO18 | |
2N3012 | CENTRAL |
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Small Signal Transistors | |
2N3012CSM | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed LCC1 | |
2N3012LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | |
2N3013 | NJSEMI |
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N-P-N EPITAXIAL MESA SILICON TRANSISTORS | |
2N3013 | CENTRAL |
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NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
2N3013LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N3014 | CENTRAL |
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NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
2N3014 | NJSEMI |
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Trans GP BJT NPN 20V 3-Pin TO-18 Box | |
2N3014LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, |