是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.24 |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-206AA | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 400 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3012CSM | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed LCC1 | |
2N3012LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | |
2N3013 | NJSEMI |
获取价格 |
N-P-N EPITAXIAL MESA SILICON TRANSISTORS | |
2N3013 | CENTRAL |
获取价格 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
2N3013LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N3014 | CENTRAL |
获取价格 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
2N3014 | NJSEMI |
获取价格 |
Trans GP BJT NPN 20V 3-Pin TO-18 Box | |
2N3014LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N3015 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3015LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI |