Datasheet > 2N3019

2N3019

更新时间： 2024-09-14 22:45:03

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描述
NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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中文翻译

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数据手册

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2N3019 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N3019

2N3020

TO-39

Metal Can Package

Designed for use in General Purpose Amplifier and High Speed Switching Applications

These Transistors are also Suitable for High Current Amplifier Applications

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

V_CEO

V_CBO

V_EBO

I_CM

140

800

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

P_D

ºC

Power Dissipation @ Ta=25º C

Power Dissipation@ Tc=25ºC

Junction Temperature

Storage Temperature

T_j

T_stg

+200

-65 to +200

THERMAL RESISTANCE

Junction to Ambient

Junction to Case

R_th(j-a)

R_th(j-c)

218.7

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BV_CEO

TEST CONDITION

I_C=30mA,I_B=0

MIN

MAX

UNITS

Collector Emitter Breakdown Voltage

Collector Base Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Leakage Current

BV_CBO

BV_EBO

I_CBO

I_C=100mA, I_E=0

I_E=100mA, I_C=O

140

V_CB=90V, I_E=0

V_CB=90V, I_E=0, Ta=150ºC

V_EB=5V, I_C=0

I_EBO

Emitter Leakage Current

V_CE(sat)

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

0.2

0.5

Collector Emitter Saturation Voltage

V_BE(sat)

I_C=150mA, I_B=15mA

1.1

Base Emitter Saturation Voltage

Continental Device India Limited

Data Sheet

Page 1 of 4

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中文翻译

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