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2N3019S PDF预览

2N3019S

更新时间: 2024-10-31 22:45:03
品牌 Logo 应用领域
SEMICOA 晶体晶体管开关
页数 文件大小 规格书
2页 47K
描述
Type 2N3019S Geometry 4500 Polarity NPN

2N3019S 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.26
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHz

2N3019S 数据手册

 浏览型号2N3019S的Datasheet PDF文件第2页 
Data Sheet No. 2N3019S  
Ge ne ric Pa rt Numbe r:  
2N3019  
Type 2N3019S  
Geometry 4500  
Polarity NPN  
Qual Level: JAN - JANS  
REF: MIL-PRF-19500/391  
Features:  
·
General-purpose transistor for  
switching and amplifier applica-  
tons.  
·
·
Housed in a TO-39 case.  
Also available in chip form using  
the 4500 chip geometry.  
·
·
The Min and Max limits shown are  
per MIL-PRF-19500/391 which  
Semicoa meets in all cases.  
Radiation Graphs available.  
TO-39  
Maximum Ratings  
TC = 25oC unless otherwise specified  
Rating  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
80  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
140  
V
7.0  
V
1.0  
mA  
oC  
TJ  
-55 to +175  
-55 to +175  
oC  
TSTG  

2N3019S 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N3019S MICROSEMI

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