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2N3019 PDF预览

2N3019

更新时间: 2024-11-17 22:12:19
品牌 Logo 应用领域
SEME-LAB 晶体晶体管开关
页数 文件大小 规格书
2页 21K
描述
NPN SILICON TRANSISTOR

2N3019 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.07
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N3019 数据手册

 浏览型号2N3019的Datasheet PDF文件第2页 
2N3019  
NPN SILICON TRANSISTOR  
MECHANICAL DATA  
Dimensions in mm (inches)  
8.89 (0.35)  
9.40 (0.37)  
7.75 (0.305)  
8.51 (0.335)  
FEATURES  
4.19 (0.165)  
4.95 (0.195)  
• NPN High Voltage Planar Transistor  
• Hermetic TO39 Package  
0.89  
(0.035)  
max.  
12.70  
(0.500)  
min.  
• Full Screening Options Available  
7.75 (0.305)  
8.51 (0.335)  
dia.  
5.08 (0.200)  
typ.  
2.54  
2
(0.100)  
1
3
0.66 (0.026)  
1.14 (0.045)  
0.71 (0.028)  
0.86 (0.034)  
45˚  
TO39 PACKAGE  
Underside View  
Pin 1 = Emitter  
Pin 2 = Base Pin 3 = Collector  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
V
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
140V  
80V  
7V  
CBO  
CEO  
EBO  
I
1A  
C
P
P
P
P
Total Device Dissipation @ TA = 25°C  
Derate above 25°C  
0.8W  
4.6mW / °C  
5W  
D
D
D
D
Total Device Dissipation @ TC = 25°C  
Derate above 25°C  
28.6mW / °C  
200°C  
T
T
Max Junction Temperature  
j
Storage Temperature  
–55 to 200°C  
16.5°C / W  
89.5°C / W  
stg  
R
R
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
jc  
ja  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim.6/99  

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