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2N3019 PDF预览

2N3019

更新时间: 2024-09-12 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体放大器晶体管开关
页数 文件大小 规格书
4页 70K
描述
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

2N3019 数据手册

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2N3019  
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS  
DESCRIPTION  
The 2N3019 is a silicon planar epitaxial NPN  
transistors in Jedec TO-39 metal case, designed  
for high-current, high frequency amplifier  
application. It feature high gain and low saturation  
voltage.  
TO-39  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
140  
80  
Unit  
V
V
V
A
7
1
o
Ptot  
Total Dissipation at Tamb 25 C  
0.8  
5
W
W
o
at Tcase 25 C  
Tstg  
Tj  
Storage Temperature  
-65 to 200  
200  
oC  
oC  
Max. Operating Junction Temperature  
1/4  
November 1997  

2N3019 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N3019 MICROSEMI

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LOW POWER NPN SILICON TRANSISTOR
JANTX2N3019S MICROSEMI

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LOW POWER NPN SILICON TRANSISTOR

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