是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
风险等级: | 5.35 | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN (315) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 400 MHz | 最大关闭时间(toff): | 75 ns |
最大开启时间(吨): | 60 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3013 | NJSEMI |
获取价格 |
N-P-N EPITAXIAL MESA SILICON TRANSISTORS | |
2N3013 | CENTRAL |
获取价格 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
2N3013LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N3014 | CENTRAL |
获取价格 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
2N3014 | NJSEMI |
获取价格 |
Trans GP BJT NPN 20V 3-Pin TO-18 Box | |
2N3014LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N3015 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3015LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI | |
2N3016 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2.5A I(C) | TO-52VAR | |
2N3017 | NJSEMI |
获取价格 |
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A |