Datasheet > 2N3019

2N3019

更新时间： 2024-11-21 07:28:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关
页数	文件大小	规格书
3页	82K
描述
Low Power Transistor

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中文翻译

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2N3019 数据手册

2N3019

Low Power Transistor

NPN Silicon

Features

• MIL−PRF−19500/391Qualified

http://onsemi.com

• Available as JAN, JANTX, and JANTXV

COLLECTOR

• Hermetically Sealed Commercial Product with Option for Military

Temperature Range Screening

BASE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Characteristic

Collector−Emitter Voltage

Collector−Base Voltage

Symbol

Value

Unit

Vdc

Adc

EMITTER

CEO

CBO

EBO

140

7.0

Emitter−Base Voltage

Collector Current − Continuous

1.0

Total Device Dissipation @ T = 25°C

800

5.0

Total Device Dissipation @ T = 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to

+200

°C

stg

TO−5

CASE 205AA

STYLE 1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

195

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

Shipping

JAN2N3019

JANTX2N3019

JANTXV2N3019

TO−5

Bulk

Publication Order Number:

July, 2011 − Rev. 0

2N3019/D

12 3

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