Datasheet > 2N2221AUBE3

2N2221AUBE3

更新时间： 2024-11-19 05:10:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	64K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

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2N2221AUBE3 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/255

DEVICES

LEVELS

JANSM – 3K Rads (Si)

JANSD – 10K Rads (Si)

JANSP – 30K Rads (Si)

JANSL – 50K Rads (Si)

JANSR – 100K Rads (Si)

JANSF – 300K Rads (Si)

JANSG – 500K Rads (Si)

JANSH – 1MEG Rads (Si)

2N2221A

2N2222A

2N2221AL

2N2221AUA

2N2221AUB

2N2221AUBC

2N2222AL

2N2222AUA

2N2222AUB

2N2222AUBC

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Emitter-Base Voltage

Vdc

6.0

Vdc

Collector Current

800

mAdc

Total Power Dissipation @ T_A= +25°C

TO-18 (TO-206AA)

2N2221A, 2N2222A

2N2221A, L

2N2221AUA

2N2221AUB, UBC

2N2222A, L

2N2222AUA

2N2222AUB, UBC

0.5

P_T

0.65

0.50

Operating & Storage Junction Temperature Range

T_op, T_stg

-65 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

4 PIN

2N2221AUA, 2N2222AUA

Thermal Resistance, Junction-to-Ambient

2N2221A, L

2N2221AUA

2N2221AUB, UBC

2N2222A, L

2N2222AUA

2N2222AUB, UBC

325

210

325

°C/W

R_θJA

1. Derate linearly 3.08 mW/°C above T_A> +37.5°C

2. Derate linearly 4.76 mW/°C above T_A> +63.5°C

3 PIN

2N2221AUB, 2N2222AUB

2N2221AUBC, 2N2222AUBC

(UBC = Ceramic Lid Version)

T4-LDS-0042 Rev. 2 (080857)

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