生命周期: | Active | 包装说明: | CERAMIC PACKAGE-4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.58 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.8 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JESD-30 代码: | R-CDSO-N3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 300 ns |
最大开启时间(吨): | 35 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2221AUBE3 | MICROSEMI |
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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC | |
2N2221AX | SEME-LAB |
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HIGH SPEED SWITCHING BIPOLAR NPN | |
2N2221CSM | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed LCC1 | |
2N2221DCSM | SEME-LAB |
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Dual Bipolar NPN Devices in a hermetically sealed | |
2N2221L | TE |
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Radiation Hardened NPN Silicon Switching Transistors | |
2N2221UA | TE |
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Radiation Hardened NPN Silicon Switching Transistors | |
2N2222 | MICRO-ELECTRONICS |
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
2N2222 | STMICROELECTRONICS |
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HIGH-SPEED SWITCHES | |
2N2222 | INFINEON |
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NPN Silicon Planar Transistors | |
2N2222 | SEMICOA |
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Chip Type 2C2222A Geometry 0400 Polarity NPN |