Datasheet > 2SC4944

2SC4944

更新时间： 2024-11-12 07:31:07

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
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描述
DUAL TRANSISTOR (NPN+ NPN)

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中文翻译

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数据手册

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2SC4944 数据手册

2SC4944

DUAL TRANSISTOR (NPN+NPN)

SOT-353

Features

Small package (dual type)

High voltage and high current

High h_FE,excellent h_FElinearity

Complementary to 2SA1873

Marking: LY LGR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

150

℃

P_C

200

T_J

150

T_stg

Storage Temperature

-55 to150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=60V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=5V,I_C=0

DC current gain

V_CE=6V,I_C=2mA

I_C=100mA,I_B=10mA

V_CE=10V,I_C=1mA

V_CB=10V,I_E=0,f=1MHz

120

400

0.25

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

C_ob

3.5

CLASSIFICATION OF h_FE

Rank

120-240

Range

200-400

LGR

Marking

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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