Datasheet > 2SC4954-T2FB

2SC4954-T2FB

更新时间： 2024-02-12 16:05:30

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
7页	91K
描述
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-3

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中文翻译

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技术参数
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2SC4954-T2FB 技术参数

生命周期：	Obsolete	包装说明：	MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.01 A
基于收集器的最大容量：	0.5 pF	集电极-发射极最大电压：	6 V
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12000 MHz
Base Number Matches：	1

2SC4954-T2FB 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4954

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Low Noise, High Gain

Low Voltage Operation

Low Feedback Capacitance

C^re= 0.3 pF TYP.

in millimeters

2.8±±.2

1.5

±.65⁺^–^±^±^.^.¹¹⁵

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

Embossed tape 8 mm wide.

2SC4954-T1

3 Kpcs/Reel.

Pin3 (Collector) face to perforation side of the

tape.

2SC4954-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Emitter), Pin2 (Base) face to perforation

side of the tape.

Marking

To order evaluation samples, contact your nearby sales office.

Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

Tstg

–65 to +150

˚C

Caution; Electrostatic Sensitive Device.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU1±±37EJ±1V±DS (1st edition)

(Previous No. P1±376EJ2V±DS±±)

Date Published October 2±±1 CP(K)

Printed in Japan

The mark

shows major revised points.



NEC Corporation 1993



NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7

中文翻译

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与2SC4954-T2FB相关器件

型号	品牌	获取价格	描述	数据表
2SC4954-T2T82	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,
2SC4954-T82	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC4955(NE68533)	ETC	获取价格	Discrete
2SC4955-T1	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC4955-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T1T83	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T1T83-A	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SC4955-T2	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

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