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2SC4955-T2 PDF预览

2SC4955-T2

更新时间: 2024-09-22 22:25:27
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器晶体管
页数 文件大小 规格书
6页 47K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

2SC4955-T2 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC4955  
HIGH FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
MINI MOLD  
FEATURES  
Low Noise, High Gain  
PACKAGE DIMENSIONS  
Low Voltage Operation  
Low Feedback Capacitance  
Cre = 0.4 pF TYP.  
in millimeters  
2.8±0.2  
1.5  
0.65+00..115  
ORDERING INFORMATION  
2
1
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
3
2SC4955-T1  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin3 (Collector) face to perforation  
side of the tape.  
2SC4955-T2  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin1 (Emitter), Pin2 (Base) face to  
perforation side of the tape.  
Marking  
*
Please contact with responsible NEC person, if you evaluation  
sample. Unit sample quantity shall be 50 pcs.  
(Part No.: 2SC4955)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
PIN CONNECTIONS  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
9
V
V
1. Emitter  
2. Base  
6
2
30  
V
3. Collector  
mA  
mW  
˚C  
˚C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
180  
Tj  
150  
Tstg  
–64 to +150  
Document No. P10377EJ2V0DS00 (2nd edition)  
(Previous No. TD-2406)  
Date Published July 1995 P  
Printed in Japan  
1993  
©

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