5秒后页面跳转
2SC4955-T1 PDF预览

2SC4955-T1

更新时间: 2024-11-11 22:18:51
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器晶体管
页数 文件大小 规格书
6页 47K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

2SC4955-T1 数据手册

 浏览型号2SC4955-T1的Datasheet PDF文件第2页浏览型号2SC4955-T1的Datasheet PDF文件第3页浏览型号2SC4955-T1的Datasheet PDF文件第4页浏览型号2SC4955-T1的Datasheet PDF文件第5页浏览型号2SC4955-T1的Datasheet PDF文件第6页 
DATA SHEET  
SILICON TRANSISTOR  
2SC4955  
HIGH FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
MINI MOLD  
FEATURES  
Low Noise, High Gain  
PACKAGE DIMENSIONS  
Low Voltage Operation  
Low Feedback Capacitance  
Cre = 0.4 pF TYP.  
in millimeters  
2.8±0.2  
1.5  
0.65+00..115  
ORDERING INFORMATION  
2
1
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
3
2SC4955-T1  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin3 (Collector) face to perforation  
side of the tape.  
2SC4955-T2  
3 Kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin1 (Emitter), Pin2 (Base) face to  
perforation side of the tape.  
Marking  
*
Please contact with responsible NEC person, if you evaluation  
sample. Unit sample quantity shall be 50 pcs.  
(Part No.: 2SC4955)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
PIN CONNECTIONS  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
9
V
V
1. Emitter  
2. Base  
6
2
30  
V
3. Collector  
mA  
mW  
˚C  
˚C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
180  
Tj  
150  
Tstg  
–64 to +150  
Document No. P10377EJ2V0DS00 (2nd edition)  
(Previous No. TD-2406)  
Date Published July 1995 P  
Printed in Japan  
1993  
©

与2SC4955-T1相关器件

型号 品牌 获取价格 描述 数据表
2SC4955-T1FB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T1FB-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T1T83 NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T1T83-A RENESAS

获取价格

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SC4955-T2 NEC

获取价格

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC4955-T2FB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T2FB-A RENESAS

获取价格

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SC4955-T2T83 RENESAS

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T2T83-A RENESAS

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC4955-T83 NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD