Datasheet > 2SC4957-T1

2SC4957-T1

更新时间： 2024-09-22 22:23:19

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管光电二极管
页数	文件大小	规格书
6页	52K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

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中文翻译

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数据手册

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2SC4957-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4957

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Low Noise, High Gain

Low Voltage Operation

Low Feedback Capacitance

C^re= 0.3 pF TYP.

in millimeters

+0.2

2.8

–0.3

+0.2

1.5

–0.1

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

Embossed tape 8 mm wide.

2SC4957-T1

3 Kpcs/Reel.

Pin3 (Base), Pin4 (Emitter) face to perforation side

of the tape.

5˚

2SC4957-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face to perforation

side of the tape.

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4957)

PIN CONNECTIONS

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

1. Collector

2. Emitter

3. Base

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

I^C

4. Emitter

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

180

T^j

150

Tstg

–65 to +150

Caution; Electrostatic Sensitive Device.

The inform ation in this docum ent is subject to change w ithout notice.

Document No. P10379EJ2V0DS00 (2nd edition)

(Previous No. TD-2408)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6

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2SC4957-T2	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
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2SC4958	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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2SC4958-T1	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3