Datasheet > 2SC4954-T2

2SC4954-T2

更新时间： 2024-11-11 22:25:27

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
6页	50K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

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中文翻译

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数据手册

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2SC4954-T2 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4954

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Low Noise, High Gain

Low Voltage Operation

Low Feedback Capacitance

C^re= 0.3 pF TYP.

in millimeters

2.8±0.2

1.5

0.65⁺^–^00.^.¹¹⁵

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

Embossed tape 8 mm wide.

2SC4954-T1

3 Kpcs/Reel.

Pin3 (Collector) face to perforation side of the

tape.

2SC4954-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Emitter), Pin2 (Base) face to perforation

side of the tape.

Marking

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

I^C

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

Tstg

–65 to +150

Caution; Electrostatic Sensitive Device.

The inform ation in this docum ent is subject to change w ithout notice.

Document No. P10376EJ2V0DS00 (2nd edition)

(Previous No. TD-2405)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6

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