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1SS416CT,L3F(B PDF预览

1SS416CT,L3F(B

更新时间： 2024-11-21 14:50:55
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
4页 195K
描述
Rectifier Diode

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中文翻译

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1SS416CT,L3F(B 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.66二极管类型：RECTIFIER DIODE
Base Number Matches：1

1SS416CT,L3F(B 数据手册

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1SS416CT  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS416CT  
Unit: mm  
High Speed Switching Application  
0.6±0.05  
z Small package  
z Low forward voltage: V = 0.23 V (typ.) @I = 5 mA  
F
F
Absolute Maximum Ratings (Ta = 25°C)  
0.5±0.03  
+0.02  
-0.03  
0.05±0.03  
Characteristics  
Symbol  
Rating  
Unit  
0.38  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
35  
30  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
200  
mA  
mA  
A
FM  
I
100  
O
I
1
FSM  
P *  
Power dissipation  
100  
mW  
°C  
°C  
°C  
CST2  
Junction temperature  
T
125  
j
JEDEC  
JEITA  
―
―
Storage temperature range  
Operating temperature range  
T
−55 to 125  
−40 to 100  
stg  
opr  
T
TOSHIBA  
1-1P1A  
Weight: 0.7 mg (typ.)  
*:  
Mounted on a glass epoxy circuit board of 20 mm × 20 mm,  
pad dimension of 4 mm × 4 mm.  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristics  
Symbol  
Test Condition  
= 1 mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
―
I
I
I
―
―
―
―
―
―
0.18  
0.23  
0.38  
―
―
―
F (1)  
F (2)  
F (3)  
R(1)  
R(2)  
F
F
F
Forward voltage  
―
= 5 mA  
―
= 100 mA  
0.50  
20  
I
I
―
V
V
V
= 10 V  
R
R
R
Reverse current  
μA  
―
―
= 30 V  
―
50  
Total capacitance  
C
T
= 0 V, f = 1 MHz  
15  
―
pF  
Start of commercial production  
2005-03  
1
2014-03-01  
1234

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