Datasheet > 1SS416CT(TPL3)

1SS416CT(TPL3)

更新时间： 2024-11-21 14:28:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	175K
描述
Schottky (Diodes & Rectifiers) Hi-Speed 30V 100mA

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技术参数
数据手册

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1SS416CT(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	2.07	Is Samacsys：	N
Base Number Matches：	1

1SS416CT(TPL3) 数据手册

1SS416CT

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS416CT

Unit: mm

High Speed Switching Application

0.6±0.05

z Small package

z Low forward voltage: V = 0.23 V (typ.) @I = 5 mA

Absolute Maximum Ratings (Ta = 25°C)

0.5±0.03

+0.02

-0.03

0.05±0.03

Characteristics

Symbol

Rating

Unit

0.38

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

200

100

FSM

P *

Power dissipation

100

°C

CST2

Junction temperature

125

JEDEC

JEITA

―

Storage temperature range

Operating temperature range

−55 to 125

−40 to 100

stg

opr

TOSHIBA

1-1P1A

Weight: 0.7 mg (typ.)

Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristics

Symbol

Test Condition

= 1 mA

Min

Typ.

Max

Unit

―

0.18

0.23

0.38

―

F (1)

F (2)

F (3)

R(1)

R(2)

Forward voltage

―

= 5 mA

―

= 100 mA

0.50

―

= 10 V

Reverse current

μA

―

= 30 V

―

Total capacitance

= 0 V, f = 1 MHz

―

2009-01-08

12 3 4

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