Datasheet > 1SS301CCW

1SS301CCW

更新时间： 2024-09-20 07:23:47

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	181K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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数据手册

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1SS301CCW 数据手册

1SS301CCW

SILICON EPITAXIAL PLANAR DIODE

Applications

• Ultra high speed switching

Marking Code: PH

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Maximum (Peak) Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Average Forward Current

100

Maximum (Peak) Forward Current

Peak Forward Surge Current (t_p= 10 ms)

Total Power Dissipation

I_FM

I_FSM

P_tot

T_J

300

200

Junction Temperature

125

Storage Temperature Range

T_s

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 100 mA

V_F

1.2

Reverse Current

at V_R= 30 V

at V_R= 80 V

I_R

µA

0.1

0.5

Total Capacitance

at V_R= 0, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= 10 mA, V_R= 6 V, I_rr= 1 mA, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 10/10/2008

中文翻译

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