Datasheet > 1SS301TE85LF

1SS301TE85LF

更新时间： 2024-09-20 12:48:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	195K
描述
Ultra High Speed Switching Applications

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中文翻译

获取价格

数据手册

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1SS301TE85LF 数据手册

1SS301

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS301

Ultra High Speed Switching Applications

Unit: mm

z Small package

: SC-70

: V

z Low forward voltage

= 0.9 V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6 ns (typ.)

z Small total capacitance

: C = 0.9 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10 ms)

Power dissipation

300 (*)

100 (*)

2 (*)

FSM

100

°C

Junction temperature

125

JEDEC

JEITA

―

Storage temperature

−55~125

stg

SC-70

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

1-2P1B

Weight: 0.006 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1 mA

Min

Typ.

Max

Unit

―

0.60

0.72

0.90

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10 mA

= 100 mA

1.20

0.1

0.5

= 30 V

= 80 V

Reverse current

μA

―

Total capacitance

―

= 0, f = 1 MHz

―

0.9

1.6

3.0

4.0

Reverse recovery time

I = 10 mA, Fig.1

2007-11-01

12 3

中文翻译

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