Datasheet > 1SS302(T5L,PP,F)

1SS302(T5L,PP,F)

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	220K
描述
Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon

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数据手册

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1SS302(T5L,PP,F) 数据手册

1SS302

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS302

Ultra High Speed Switching Applications

Unit: mm

z Small package

: SC-70

: V

z Low forward voltage

= 0.90V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 0.9pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

300 (*)

100 (*)

2 (*)

JEDEC

―

FSM

100

°C

JEITA

SC-70

TOSHIBA

1-2P1C

Junction temperature

125

Weight: 0.006g (typ.)

Storage temperature

−55 to 125

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = unit rating × 0.7

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.60

0.72

0.90

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10mA

= 100mA

1.20

0.1

0.5

3.0

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MHz

0.9

1.6

Reverse recovery time

= 10mA, Fig.1

Start of commercial production

1986-11

2014-03-01

12 3

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